BCP52_13 Datasheet, PDF (4/22 Pages) NXP Semiconductors – 60 V, 1 A PNP medium power transistors

NXP Semiconductors
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
collector-base voltage
open emitter
-
collector-emitter voltage
open base
-
emitter-base voltage
open collector
-
collector current
-
peak collector current
single pulse;
-
t_p  1 ms
base current
-
peak base current
single pulse;
-
t_p  1 ms
total power dissipation
T_amb  25 C
BCP52
[1] _-
[2] _-
[3] _-
BCX52
[1] _-
[2] _-
[3] _-
BC52PA
[1] _-
[2] _-
[3] _-
[4] _-
[5] _-
T_j
junction temperature
-
T_amb
ambient temperature
55
T_stg
storage temperature
65
Max Unit
60
V
60
V
5
V
1
A
2
A
0.3 A
0.3 A
0.65 W
1.00 W
1.35 W
0.50 W
0.95 W
1.35 W
0.42 W
0.83 W
1.10 W
0.81 W
1.65 W
150
C
+150 C
+150 C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm².
BCP52_BCX52_BC52PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 18 October 2011
© NXP B.V. 2011. All rights reserved.
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