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BC875_04 Datasheet, PDF (4/7 Pages) NXP Semiconductors – NPN Darlington transistors | |||
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Philips Semiconductors
NPN Darlington transistors
Product speciï¬cation
BC875; BC879
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
ICES
collector-emitter cut-off current
VBE = 0 V
BC875
VCE = 45 V
BC879
VCE = 80 V
IEBO
emitter-base cut-off current
VEB = 4 V; IC = 0 A
hFE
DC current gain
VCE = 10 V; see Fig.2
IC = 150 mA
IC = 0.5 A
VCEsat
collector-emitter saturation voltage IC = 0.5 A; IB = 0.5 mA
IC = 1 A; IB = 1 mA
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 1 mA
fT
transition frequency
VCE = 5 V; IC = 0.5 A; f = 100 MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = â0.5 mA
MIN. TYP. MAX. UNIT
â
â
50 nA
â
â
50 nA
â
â
50 nA
1000 â
â
2000 â
â
â
â
1.3
â
â
1.8
â
â
2.2
â
200 â
V
V
V
MHz
â
500 â
ns
â
1300 â
ns
5000
handbook, full pagewidth
hFE
4000
3000
2000
1000
0
10â1
VCE = 10 V.
MGD838
1
10
102
103
IC (mA)
Fig.2 DC current gain; typical values.
2004 Nov 05
4
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