BC875_04 Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN Darlington transistors

Philips Semiconductors
NPN Darlington transistors
Product specification
BC875; BC879
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
BC875
BC879
collector-emitter voltage
BC875
BC879
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
V_BE = 0 V
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
60
V
−
100
V
−
45
V
−
80
V
−
5
V
−
1
A
−
2
A
−
0.2
A
−
0.83
W
−65
+150
°C
−
150
°C
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
150
UNIT
K/W
2004 Nov 05
3