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BB201215 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Low-voltage variable capacitance double diode
NXP Semiconductors
Low-voltage variable capacitance double
diode
Product specification
BB201
103
handbook, halfpage
IR
(nA)
102
10
MGU478
10−3
handbook, halfpage
TCd
(K−1)
10−4
MGU479
1
0
20
40
60
80
100
Tj (°C)
Fig.3 Reverse current as a function of junction
temperature; maximum values.
10−5
10−1
1
10
102
VR (V)
Fig.4 Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
2001 Oct 12
4