BB201215 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Low-voltage variable capacitance double diode

NXP Semiconductors
Low-voltage variable capacitance double
diode
Product specification
BB201
CHARACTERISTICS
T_j = 25 C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
I_R
reverse current
r_S
diode series resistance
C_d
diode capacitance
--C-----^d---^--¹--^V----^--
C _{d  7.5 V }
capacitance ratio
CONDITIONS
V_R = 15 V
V_R = 15 V; T_j = 85 C
f = 100 MHz; V_R = 3 V
V_R = 1 V; f = 1 MHz
V_R = 3 V; f = 1 MHz
V_R = 7.5 V; f = 1 MHz
V_R = 8 V; f = 1 MHz
f = 1 MHz
MIN.
TYP.
MAX.
UNIT


10
nA


200
nA

0.25
0.5

89
95
102
pF

60

pF
25.5
27.6
29.7
pF

25.5

pF
3.1

3.8
GRAPHICAL DATA
140
handbo_Cok_d, full pagewidth
(pF)
120
100
80
60
40
20
0
10^−1
1
10
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MGU477
10²
2001 Oct 12
3