BB156_04 Datasheet, PDF (4/7 Pages) NXP Semiconductors – Low-voltage variable capacitance diode

Philips Semiconductors
Low-voltage variable capacitance diode
Product specification
BB156
GRAPHICAL DATA
20
handbook, full pagewidth
Cd
(pF)
16
MGR466
12
8
4
0
10^−1
1
10
VR (V)
10²
f = 1 MHz; T_j = 25 °C.
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10³
I_R
(nA)
10²
mlc816
handboo¹k⁰,
3
halfpage
TC _d
(K^−1)
10 ⁴
MBH583
10
0
50
T_j (°C)
100
Fig.3 Reverse current as a function of junction
temperature; maximum values.
2004 Mar 01
10
5
10
1
1
10
VR (V) ¹⁰²
T_j = 0 °C to 85 °C.
Fig.4 Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
4