BB156_04 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Low-voltage variable capacitance diode

Philips Semiconductors
Low-voltage variable capacitance diode
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_R
r_s
C_d
C--C---_d^--d--₍^--₇^(--1-_.^-₅^--V--_V^-)--₎
reverse current
diode series resistance
diode capacitance
capacitance ratio
V_R = 10 V; see Fig.3
V_R = 10 V; T_j = 85 °C; see Fig.3
f = 470 MHz; C_d = 9 pF
f = 1 MHz; see Figs 2 and 4
V_R = 1 V
V_R = 4 V
V_R = 7.5 V
f = 1 MHz
Product specification
BB156
MIN.
−
−
−
TYP.
−
−
0.4
MAX. UNIT
10 nA
200 nA
0.7 Ω
14.4 16
7.6 8.6
4.2 4.8
2.7 3.3
17.6 pF
9.6 pF
5.4 pF
3.9
2004 Mar 01
3