BAT54CV Datasheet, PDF (4/9 Pages) NXP Semiconductors – Two Schottky barrier double diodes in ultra small SOT666 package

NXP Semiconductors
BAT54CV
Two Schottky barrier double diodes in ultra small SOT666 package
10³
I_F
(mA)
10²
(1) (2) (3)
msa892
10
(1) (2) (3)
1
10^−1
0
0.4
0.8
1.2
V_F (V)
(1) T_amb = 125 °C
(2) T_amb = 85 °C
(3) T_amb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
15
C_d
(pF)
10
10³
I_R
(μA)
10²
10
msa893
(1)
(2)
1
(3)
10^−1
0
10
20 _{VR (V)} 30
(1) T_amb = 125 °C
(2) T_amb = 85 °C
(3) T_amb = 25 °C
Fig 2. Reverse current as a function of reverse
voltage; typical values
msa891
5
0
0
10
20
V_R (V) ³⁰
T_amb = 25 °C; f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values
BAT54CV_2
Objective data sheet
Rev. 02 — 15 January 2010
© NXP B.V. 2010. All rights reserved.
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