BAT54CV Datasheet, PDF (3/9 Pages) NXP Semiconductors – Two Schottky barrier double diodes in ultra small SOT666 package

NXP Semiconductors
BAT54CV
Two Schottky barrier double diodes in ultra small SOT666 package
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[1] Refer to SOT666 standard mounting conditions.
6. Thermal characteristics
Max Unit
440
mW
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1][2] _-
-
225 K/W
[1] Refer to SOT666 standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
V_F
forward voltage
see Figure 1;
I_F = 0.1 mA
I_F = 1 mA
I_F = 10 mA
I_F = 30 mA
I_F = 100 mA
I_R
reverse current
V_R = 25 V; see Figure 2
C_d
diode capacitance V_R = 1 V; f = 1 MHz;
see Figure 3
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
[1]
-
-
240 mV
-
-
320 mV
-
-
400 mV
-
-
500 mV
-
-
800 mV
-
-
2
μA
-
-
10 pF
BAT54CV_2
Objective data sheet
Rev. 02 — 15 January 2010
© NXP B.V. 2010. All rights reserved.
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