BAT54A215 Datasheet, PDF(4/11 Page) NXP Semiconductors – Schottky barrier diodes

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BAT54A215 Datasheet, PDF (4/11 Pages) NXP Semiconductors – Schottky barrier diodes

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NXP Semiconductors

BAT54 series

Schottky barrier diodes

7. Characteristics

Table 7. Characteristics

Tamb = 25 ï°C unless otherwise specified.

Symbol Parameter

Conditions

Per diode

VF

forward voltage

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

IF = 30 mA

IF = 100 mA

IR

reverse current

VR = 25 V

Cd

diode capacitance

f = 1 MHz; VR = 1 V

trr

reverse recovery time

Min Typ

[1]

-

-

-

-

-

-

-

-

-

-

[1] -

-

-

-

[2] -

-

[1] Pulse test: tp ï£ 300 ïs; ï¤ ï£ 0.02.

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ï; measured at IR = 1 mA.

Max Unit

240 mV

320 mV

400 mV

500 mV

800 mV

2

ïA

10 pF

5

ns

103

IF

(mA)

102

10

(1) (2) (3)

1

006aac829

(3)

(1)

(2)

,5

Â$

DDD

10-1

0.0

0.4

0.8

1.2

VF (V)

(1) Tamb = 125 ï°C

(2) Tamb = 85 ï°C

(3) Tamb = 25 ï°C

Fig 1. Forward current as a function of forward

voltage; typical values

95 9

(1) Tamb = 125 ï°C

(2) Tamb = 85 ï°C

(3) Tamb = 25 ï°C

Fig 2. Reverse current as a function of reverse

voltage; typical values

BAT54_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 5 â 5 October 2012

Â© NXP B.V. 2012. All rights reserved.

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