BAT54A215 Datasheet, PDF (3/11 Pages) NXP Semiconductors – Schottky barrier diodes

NXP Semiconductors
BAT54 series
Schottky barrier diodes
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
V_R
reverse voltage
-
I_F
forward current
T_amb = 25 C
-
I_FRM
repetitive peak forward t_p  1 s;   0.5;
-
current
T_amb = 25 C
I_FSM
non-repetitive peak
square wave;
[1] _-
forward current
t_p < 10 ms
Per device; one diode loaded
P_tot
T_j
T_amb
T_stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T_amb  25 C
[2] _-
-
55
65
Max Unit
30
V
200
mA
300
mA
600
mA
250
mW
150
C
+150 C
+150 C
[1] T_j = 25 C before surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per device; one diode loaded
R_th(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1][2] _-
-
500 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAT54_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 5 October 2012
© NXP B.V. 2012. All rights reserved.
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