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74HC1G00 Datasheet, PDF (4/10 Pages) NXP Semiconductors – 2-input NAND gate
NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Min Typ Max Min
Max
VOH
HIGH-level output
VI = VIH or VIL
voltage
IO = −20 µA; VCC = 2.0 V
1.9 2.0
-
1.9
-
IO = −20 µA; VCC = 4.5 V
4.4 4.5
-
4.4
-
IO = −20 µA; VCC = 6.0 V
5.9 6.0
-
5.9
-
IO = −2.0 mA; VCC = 4.5 V
4.13 4.32 -
3.7
-
IO = −2.6 mA; VCC = 6.0 V
5.63 5.81 -
5.2
-
VOL
LOW-level output
VI = VIH or VIL
voltage
IO = 20 µA; VCC = 2.0 V
IO = 20 µA; VCC = 4.5 V
IO = 20 µA; VCC = 6.0 V
-
0 0.1
-
0.1
-
0 0.1
-
0.1
-
0 0.1
-
0.1
IO = 2.0 mA; VCC = 4.5 V
- 0.15 0.33
-
0.4
IO = 2.6 mA; VCC = 6.0 V
- 0.16 0.33
-
0.4
II
input leakage current VI = VCC or GND; VCC = 6.0 V
-
-
1.0
-
1.0
ICC
supply current
VI = VCC or GND; IO = 0 A;
-
-
10
-
20
VCC = 6.0 V
CI
input capacitance
-
1.5
-
-
-
For type 74HCT1G00
VIH
HIGH-level input
VCC = 4.5 V to 5.5 V
voltage
2.0 1.6
-
2.0
-
VIL
LOW-level input
VCC = 4.5 V to 5.5 V
voltage
-
1.2 0.8
-
0.8
VOH
HIGH-level output
VI = VIH or VIL
voltage
IO = −20 µA; VCC = 4.5 V
4.4 4.5
-
4.4
-
IO = −2.0 mA; VCC = 4.5 V
4.13 4.32 -
3.7
-
VOL
LOW-level output
VI = VIH or VIL
voltage
IO = 20 µA; VCC = 4.5 V
-
0 0.1
-
0.1
IO = 2.0 mA; VCC = 4.5 V
- 0.15 0.33
-
0.4
II
input leakage current VI = VCC or GND; VCC = 5.5 V
-
-
1.0
-
1.0
ICC
supply current
VI = VCC or GND; IO = 0 A;
-
-
10
-
20
VCC = 5.5 V
∆ICC
additional supply
per input; VCC = 4.5 V to 5.5 V;
-
- 500
-
850
current
VI = VCC − 2.1 V; IO = 0 A
CI
input capacitance
-
1.5
-
-
-
Unit
V
V
V
V
V
V
V
V
V
V
µA
µA
pF
V
V
V
V
V
V
µA
µA
µA
pF
74HC_HCT1G00_4
Product data sheet
Rev. 04 — 11 July 2007
© NXP B.V. 2007. All rights reserved.
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