74HC1G00 Datasheet, PDF (3/10 Pages) NXP Semiconductors – 2-input NAND gate

NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). ^[1]
Symbol Parameter
Conditions
Min
Max
Unit
V_CC
I_IK
I_OK
I_O
I_CC
I_GND
T_stg
P_tot
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
V_I < −0.5 V or V_I > V_CC + 0.5 V
V_O < −0.5 V or V_O > V_CC + 0.5 V
−0.5 V < V_O < V_CC + 0.5 V
T_amb = −40 °C to +125 °C
−0.5
-
-
-
-
−25
−65
[2] _-
+7.0
V
±20
mA
±20
mA
±12.5 mA
25
mA
-
mA
+150
°C
200
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] Above 55 °C the value of P_tot derates linearly with 2.5 mW/K.
9. Recommended operating conditions
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
V_CC
V_I
V_O
T_amb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
10. Static characteristics
74HC1G00
Min Typ Max
2.0
5.0
6.0
0
-
V_CC
0
-
V_CC
−40 +25 +125
-
-
625
-
-
139
-
-
83
74HCT1G00
Min Typ Max
4.5
5.0
5.5
0
-
V_CC
0
-
V_CC
−40 +25 +125
-
-
-
-
-
139
-
-
-
Unit
V
V
V
°C
ns/V
ns/V
ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T_amb = 25 °C.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ Max Min
Max
For type 74HC1G00
V_IH
HIGH-level input
V_CC = 2.0 V
voltage
V_CC = 4.5 V
V_CC = 6.0 V
V_IL
LOW-level input
V_CC = 2.0 V
voltage
V_CC = 4.5 V
V_CC = 6.0 V
1.5 1.2
-
1.5
3.15 2.4
-
3.15
4.2 3.2
-
4.2
-
0.8 0.5
-
-
2.1 1.35
-
-
2.8 1.8
-
-
V
-
V
-
V
0.5 V
1.35 V
1.8 V
74HC_HCT1G00_4
Product data sheet
Rev. 04 — 11 July 2007
© NXP B.V. 2007. All rights reserved.
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