Z0109NN0 Datasheet, PDF (3/17 Pages) NXP Semiconductors – Logic level four-quadrant triac

NXP Semiconductors
Z0109NN0
4Q Triac
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DRM
I_T(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; T_sp ≤ 105 °C; see Figure 3;
see Figure 1; see Figure 2
I_TSM
non-repetitive peak on-state
full sine wave; T_j(init) = 25 °C; t_p = 20 ms;
current
see Figure 4; see Figure 5
I²t
dI_T/dt
I²t for fusing
rate of rise of on-state current
full sine wave; T_j(init) = 25 °C; t_p = 16.7 ms
t_p = 10 ms; sine-wave pulse
I_T = 1 A; I_G = 20 mA; dI_G/dt = 100 mA/µs;
T2+ G+
I_T = 1 A; I_G = 20 mA; dI_G/dt = 100 mA/µs;
T2+ G-
I_T = 1 A; I_G = 20 mA; dI_G/dt = 100 mA/µs;
T2- G-
I_T = 1 A; I_G = 20 mA; dI_G/dt = 100 mA/µs;
T2- G+
I_GM
P_GM
P_G(AV)
T_stg
T_j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Min Max Unit
-
800 V
-
1
A
-
12.5 A
-
13.8 A
-
0.78 A²s
-
50 A/µs
-
50 A/µs
-
50 A/µs
-
20 A/µs
-
1
A
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
1.2
I_T(RMS)
(A)
0.8
0.4
003aac270
8
I_T(RMS)
(A)
6
4
2
003aac269
0
-5 0
0
50
100
150
T_{s p} (°C)
0
10^-2
10^-1
1
10
surge duration (s)
Fig 1. RMS on-state current as a function of solder
point temperature; maximum values
Fig 2. RMS on-state current as a function of surge
duration; maximum values
Z0109NN0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 10 May 2011
© NXP B.V. 2011. All rights reserved.
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