PMR670UPE Datasheet, PDF (3/16 Pages) NXP Semiconductors – 20 V, 480 mA P-channel Trench MOSFET

NXP Semiconductors
PMR670UPE
20 V, 480 mA P-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_DS
drain-source voltage
T_j = 25 °C
-
V_GS
gate-source voltage
-8
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C
[1]
-
V_GS = -4.5 V; T_amb = 100 °C
[1]
-
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
-
P_tot
total power dissipation
T_amb = 25 °C
[2]
-
[1]
-
T_sp = 25 °C
-
T_j
junction temperature
-55
T_amb
ambient temperature
-55
T_stg
storage temperature
-65
Source-drain diode
I_S
source current
ESD maximum rating
T_amb = 25 °C
[1]
-
V_ESD
electrostatic discharge voltage HBM
[3]
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Max Unit
-20 V
8
V
-480 mA
-300 mA
-1.9 A
250 mW
300 mW
770 mW
150 °C
150 °C
150 °C
-300 mA
2000 V
120
P_der
(%)
80
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120
I_der
(%)
80
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40
40
0
−75
−25
25
75
125
175
T_j (°C)
0
−75
−25
25
75
125
175
T_j (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMR670UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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