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PMR670UPE Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, 480 mA P-channel Trench MOSFET | |||
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PMR670UPE
20 V, 480 mA P-channel Trench MOSFET
Rev. 1 â 13 September 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
ï® Very fast switching
ï® Trench MOSFET technology
ï® ESD protection up to 2 kV
ï® AEC-Q101 qualified
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® High-side loadswitch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
-
-8
[1]
-
RDSon
drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
-
resistance
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Typ Max Unit
-
-20 V
-
8
V
-
-480 mA
0.67 0.85 â¦
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