PMLL4148L_11 Datasheet, PDF (3/11 Pages) NXP Semiconductors – High-speed switching diodes

NXP Semiconductors
PMLL4148L; PMLL4448
High-speed switching diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
P_tot
T_j
T_amb
T_stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T_amb = 25 °C
[1] _-
-
−65
−65
Max
500
200
+200
+200
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] T_j = 25 °C prior to surge.
Unit
mW
°C
°C
°C
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max
[1] _-
-
350
-
-
300
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
V_F
forward voltage
PMLL4148L
I_F = 50 mA
-
-
PMLL4448
I_F = 5 mA
620 -
I_F = 100 mA
-
-
I_R
reverse current
V_R = 20 V
V_R = 20 V; T_j = 150 °C
-
-
-
-
I_R
reverse current
PMLL4448
V_R = 20 V; T_j = 100 °C
-
-
C_d
diode capacitance
V_R = 0 V; f = 1 MHz
-
-
t_rr
reverse recovery time
[1] _-
-
V_FR
forward recovery voltage
[2] _-
-
[1] When switched from I_F = 10 mA to I_R = 60 mA; R_L = 100 Ω; measured at I_R = 1 mA.
[2] When switched from I_F = 50 mA; t_r = 20 ns.
Max Unit
1
V
720 mV
1
V
25 nA
50 μA
3
μA
4
pF
4
ns
2.5 V
PMLL4148L_PMLL4448
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 1 February 2011
© NXP B.V. 2011. All rights reserved.
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