PMEG3005EB Datasheet, PDF (3/10 Pages) NXP Semiconductors – 0.5 A very low VF MEGA Schottky barrier rectifiers

NXP Semiconductors
PMEG3005EB; PMEG3005EL
0.5 A very low V_F MEGA Schottky barrier rectifiers
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_R
reverse voltage
-
I_F
forward current
T_sp ≤ 55 °C
-
I_FRM
repetitive peak forward current t_p ≤ 1 ms;
-
δ ≤ 0.25
I_FSM
non-repetitive peak forward square wave;
-
current
t_p = 8 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
[1]
PMEG3005EB
-
PMEG3005EL
-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max
Unit
30
V
0.5
A
1
A
3
A
310
mW
250
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG3005EB
PMEG3005EL
thermal resistance from
junction to solder point
PMEG3005EB
Conditions
in free air
Min Typ Max Unit
[1][2]
-
-
400 K/W
-
-
500 K/W
[3]
-
-
75 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering point of cathode tab.
PMEG3005EB_PMEG3005EL_1
Product data sheet
Rev. 01 — 29 November 2006
© NXP B.V. 2006. All rights reserved.
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