PMBTA64 Datasheet, PDF (3/6 Pages) NXP Semiconductors – PNP Darlington transistor

NXP Semiconductors
PNP Darlington transistor
Product data sheet
PMBTA64
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEon
f_T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter on-state voltage
transition frequency
I_E = 0; V_CB = −30 V
−
I_C = 0; V_EB = −10 V;
−
I_C = −10 mA; V_CE = −5 V; (see Fig.2) 10000
I_C = −100 mA; V_CE = −5 V; (see Fig.2) 20000
I_C = −100 mA; I_B = −0.1 mA
−
I_C = −100 mA; V_CE = −5 V
−
I_C = −50 mA; V_CE = −5 V; f = 100 MHz 125
MAX.
−100
−100
−
−
−1.5
−2
−
UNIT
nA
nA
V
V
MHz
100000
handbook, full pagewidth
hFE
80000
60000
40000
20000
0
−1
V_CE = −2 V
MGD836
−10
−10²
−10³
IC (mA)
Fig.2 DC gain current; typical values.
2004 Jan 22
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