PMBTA64 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP Darlington transistor

NXP Semiconductors
PNP Darlington transistor
Product data sheet
PMBTA64
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10000).
APPLICATIONS
• High input impedance preamplifiers.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complement: PMBTA14.
MARKING
TYPE NUMBER
PMBTA64
MARKING CODE⁽¹⁾
*2V
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
handbook, halfpage
3
1
2
Top view
1
3
TR1
TR2
2
MAM299
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMBTA64
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
V_BE = 0
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−30
−10
−500
−800
−200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004 Jan 22
2