PMBS3906 Datasheet, PDF (3/7 Pages) NXP Semiconductors – PNP general purpose transistor

NXP Semiconductors
PNP general purpose transistor
Product data sheet
PMBS3906
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
F
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
CONDITIONS
I_E = 0; V_CB = −30 V
I_C = 0; V_EB = −5 V
V_CE = −1 V; (see Fig.2)
I_C = −0.1 mA
I_C = −1 mA
I_C = −10 mA
I_C = −50 mA; note 1
I_C = −100 mA; note 1
I_C = −10 mA; I_B = −1 mA
I_C = −50 mA; I_B = −5 mA; note 1
I_C = −10 mA; I_B = −1 mA
I_C = −50 mA; I_B = −5 mA; note 1
I_E = i_e = 0; V_CB = −5 V; f = 100 MHz
I_C = i_c = 0; VE_B = −0.5 V; f = 100 MHz
I_C = −10 mA; V_CE = −20 V;
f = 100 MHz
I_C = −100 µA; V_CE = −5 V; R_S = 1 kΩ;
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = −10 mA; I_Bon = −1 mA;
I_Boff = 1 mA
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
60
80
100
60
30
−
−
−
−
−
−
150
−
−
−
−
−
−
−
MAX.
−50
−50
UNIT
nA
nA
−
−
300
−
−
−250
−400
−850
−950
4.5
12
−
mV
mV
mV
mV
pF
pF
MHz
4
dB
100 ns
50
ns
50
ns
700 ns
600 ns
100 ns
2004 Feb 02
3