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PMBS3906 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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NXP Semiconductors
PNP general purpose transistor
Product data sheet
PMBS3906
FEATURES
⢠Low current (max. 100 mA)
⢠Low voltage (max. 40 V).
APPLICATIONS
⢠General purpose switching and amplification, e.g.
telephony and professional communication equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: PMBS3904.
MARKING
TYPE NUMBER
PMBS3906
MARKING CODE(1)
*O6
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMBS3906
NAME
â
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current capability
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ⤠25 °C
MIN.
â
â
â
â
â
â
â
â65
â
â65
MAX.
â40
â40
â5
â100
â200
â200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004 Feb 02
2
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