PBSS301PD Datasheet, PDF (3/14 Pages) NXP Semiconductors – 20 V, 4 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS301PD
20 V, 4 A PNP low V_CEsat (BISS) transistor
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
150
°C
+150 °C
+150 °C
[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².
[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width t_p ≤ 10 ms.
1600
P_tot
(mW)
1200
(1)
800
(2)
(3)
400
(4)
006aaa270
0
−75
−25
25
75
(1) Ceramic PCB, Al₂O₃, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm²
(3) FR4 PCB, mounting pad for collector 1 cm²
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
T_amb (°C)
PBSS301PD_3
Product data sheet
Rev. 03 — 17 December 2007
© NXP B.V. 2007. All rights reserved.
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