PBSS301PD Datasheet, PDF (1/14 Pages) NXP Semiconductors – 20 V, 4 A PNP low VCEsat (BISS) transistor

PBSS301PD
20 V, 4 A PNP low V_CEsat (BISS) transistor
Rev. 03 — 17 December 2007
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS301ND.
1.2 Features
I Very low collector-emitter saturation resistance
I Ultra low collector-emitter saturation voltage
I 4 A continuous collector current
I Up to 15 A peak current
I High efficiency due to less heat generation
1.3 Applications
I Power management functions
I Charging circuits
I DC-to-DC conversion
I MOSFET gate driving
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
collector current
[1] _-
peak collector current
single pulse;
-
t_p ≤ 1 ms
collector-emitter saturation I_C = −4 A;
[2] _-
resistance
I_B = −400 mA
-
−20
-
−4
-
−15
50
70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Unit
V
A
A
mΩ