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PBLS6005D Datasheet, PDF (3/16 Pages) NXP Semiconductors – 60 V PNP BISS loadswitch | |||
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NXP Semiconductors
PBLS6005D
60 V PNP BISS loadswitch
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
TR1; PNP low VCEsat transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current (DC)
[1] -
[2] -
[3] -
ICM
peak collector current
single pulse;
-
tp ⤠1 ms
IB
base current (DC)
-
IBM
peak base current
single pulse;
-
tp ⤠1 ms
Ptot
total power dissipation
Tamb ⤠25 °C
[1] -
[2] -
[3] -
TR2; NPN resistor-equipped transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current (DC)
-
ICM
peak collector current
-
Ptot
total power dissipation
Tamb ⤠25 °C
[1] -
[2] -
[3] -
Per device
Ptot
total power dissipation
Tamb ⤠25 °C
[1] -
[2] -
[3] -
Tstg
storage temperature
â65
Tj
junction temperature
-
Tamb
ambient temperature
â65
Max Unit
â80
V
â60
V
â5
V
â700 mA
â850 mA
â1
A
â2
A
â300 mA
â1
A
250
mW
350
mW
400
mW
50
V
50
V
10
V
+40
V
â10
V
100
mA
100
mA
200
mW
200
mW
200
mW
400
mW
530
mW
600
mW
+150 °C
150
°C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBLS6005D_2
Product data sheet
Rev. 02 â 7 September 2009
© NXP B.V. 2009. All rights reserved.
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