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PBLS6005D Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V PNP BISS loadswitch | |||
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PBLS6005D
60 V PNP BISS loadswitch
Rev. 02 â 7 September 2009
Product data sheet
1. Product proï¬le
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
I Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
I Low threshold voltage (< 1 V) compared to MOSFET
I Low drive power required
I Space-saving solution
I Reduction of component count
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage
IC
collector current (DC)
Conditions
open base
Min Typ Max Unit
-
-
â60 V
[1] -
-
â1
A
RCEsat
collector-emitter saturation IC = â1 A;
resistance
IB = â100 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
[2] -
-
-
33
0.8
255 340 mâ¦
-
50
V
-
100 mA
47
61
kâ¦
1
1.2
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ⤠300 µs; δ ⤠0.02
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