 English |
|
|
|
|
|
|
|
| BTA312-600D Datasheet, PDF (3/14 Pages) NXP Semiconductors – 3Q Hi-Com Triac | |||
| |||
| ◁ |
NXP Semiconductors
BTA312-600D
3Q Hi-Com Triac
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
IT(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; Tmb ⤠101 °C;
see Figure 3; see Figure 1; see Figure 2
ITSM
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
non-repetitive peak on-state
current
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 4; see Figure 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
tp = 10 ms; sine-wave pulse
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
over any 20 ms period
Min Max Unit
-
600 V
-
12 A
-
95 A
-
105 A
-
45
A2s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
50
IT(RMS)
(A)
40
30
003aab687
15
IT(RMS)
(A)
10
003aab686
20
10
0
10-2
10-1
1
10
surge duration (s)
5
0
-50
0
50
100
150
Tmb (°C)
Fig 1. RMS on-state current as a function of surge
duration; maximum values
Fig 2. RMS on-state current as a function of mounting
base temperature; maximum values
BTA312-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 30 November 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese