BLF6G10L-40BRN Datasheet, PDF (3/13 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF6G10L-40BRN
Power LDMOS transistor
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_GS
V_GS(sense)
I_D
T_stg
T_j
drain-source voltage
gate-source voltage
sense gate-source voltage
drain current
storage temperature
junction temperature
Min Max Unit
-
65 V
−0.5 +11 V
−0.5 +9 V
-
11
A
−65 +150 °C
-
200 °C
5. Thermal characteristics
Table 5.
Symbol
R_th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
6. Characteristics
Conditions
T_case = 80 °C; P_L = 2.5 W (CW)
Typ Unit
1.7 K/W
Table 6. Characteristics
T_j = 25 °C per section; unless otherwise specified.
Symbol Parameter
V_(BR)DSS
V_GS(th)
I_Dq
drain-source breakdown voltage
gate-source threshold voltage
quiescent drain current
I_DSS
I_DSX
I_GSS
g_fs
R_DS(on)
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V_GS = 0 V; I_D = 0.5 mA
V_DS = 10 V; I_D = 59 mA
sense transistor: I_DS = 8.2 mA,
V_DS = 26.5 V; main transistor:
V_DS = 28 V
V_GS = 0 V; V_DS = 28 V
V_GS = V_GS(th) + 3.75 V; V_DS = 10 V
V_GS = 11 V; V_DS = 0 V
V_DS = 10 V; I_D = 2.9 A
V_GS = V_GS(th) + 3.75 V; I_D = 2.1 A
Min Typ
65 -
1.4 1.9
280 360
Max Unit
-
V
2.4 V
420 mA
-
-
1.4 μA
8.8 10
-
A
-
-
140 nA
2.7 4.3 -
S
0.09 0.25 0.39 Ω
BLF6G10L-40BRN
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 August 2010
© NXP B.V. 2010. All rights reserved.
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