BLF6G10L-40BRN Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G10L-40BRN
Power LDMOS transistor
Rev. 01 — 9 August 2010
Preliminary data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1 GHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV)
G_p
η_D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA^[1]
791 to 821
28 2.5
23.0 15.0
ACPR
(dBc)
−42.5
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a
supply voltage of 28 V and an I_Dq of 360 mA:
‹ Average output power (P_L(AV)) = 2.5 W
‹ Power gain (G_p) = 23.0 dB
‹ Drain efficiency (η_D) = 15.0 %
‹ ACPR = −42.5 dBc
„ Easy power control
„ Integrated ESD protection
„ Enhanced ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (728 MHz to 960 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
„ Integrated current sense