BFS20 Datasheet, PDF (3/6 Pages) NXP Semiconductors – NPN medium frequency transistor

NXP Semiconductors
NPN medium frequency transistor
Product data sheet
BFS20
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
collector-base cut-off current I_E = 0; V_CB = 20 V
I_E = 0; V_CB = 20 V; T_j = 100 °C
I_EBO
emitter-base cut-off current I_C = 0; V_EB = 4 V
h_FE
DC current gain
I_C = 7 mA; V_CE = 10 V
V_BE
base-emitter voltage
I_C = 7 mA; V_CE = 10 V
C_c
collector capacitance
I_E = I_e = 0; V_CB = 10 V; f = 1 MHz
C_re
feedback capacitance
I_C = 0; V_CB = 10 V; f = 1 MHz
f_T
transition frequency
I_C = 5 mA; V_CE = 10 V; f = 100 MHz
MIN.
−
−
−
40
−
−
−
275
TYP.
−
−
−
85
740
1
350
450
MAX.
100
10
100
−
900
−
−
−
UNIT
nA
µA
nA
mV
pF
fF
MHz
2004 Feb 05
3