BFS20 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN medium frequency transistor

NXP Semiconductors
NPN medium frequency transistor
Product data sheet
BFS20
FEATURES
• I_C(max) = 25 mA
• V_CEO(max) = 20 V
• Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
• IF and VHF thick and thin-film circuit applications.
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
TYPE NUMBER
BFS20
MARKING CODE⁽¹⁾
G1*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
BFS20
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
30
20
4
25
25
250
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
2004 Feb 05
2