BFG93A Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN 6 GHz wideband transistors

NXP Semiconductors
NPN 6 GHz wideband transistors
Product specification
BFG93A; BFG93A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
open emitter
collector-emitter voltage
open base
emitter-base voltage
open collector
collector current (DC)
total power dissipation
storage temperature range
T_s ≤ 85 °C; note 1
junction operating temperature
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
15
12
2
35
300
+150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
290
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector leakage current
h_FE
DC current gain
C_c
collector capacitance
C_e
emitter capacitance
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral power
gain; note 1
F
noise figure
CONDITIONS
I_E = 0; V_CB = 5 V
I_C = 30 mA; V_CE = 5 V
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
I_C = i_c = 0; V_EB = 5 V; f = 1 MHz
I_C = i_c = 0; V_CB = 5 V; f = 1 MHz
I_C = 30 mA; V_CE = 5 V; f = 500 MHz
I_C = 30 mA; V_CE = 8 V; T_amb = 25 °C;
f = 1 GHz
I_C = 30 mA; V_CE = 8 V; T_amb = 25 °C;
f = 2 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz
MIN.
−
40
−
−
−
4.5
−
TYP.
−
90
0.9
1.9
0.6
6
16
MAX.
50
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
−
10
−
dB
−
1.7 −
dB
−
2.3 −
dB
Note
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and G_UM
=
10
log --₍--1-----_–------S----₁---₁----S₂---₎-²---¹₍---1-²----_–------S----₂--₂-----₂---₎-
dB.
Rev. 05 - 26 November 2007
3 of 13