BFG93A Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN 6 GHz wideband transistors

NXP Semiconductors
NPN 6 GHz wideband transistors
Product specification
BFG93A; BFG93A/X
FEATURES
• High power gain
• Low noise figure
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
NPN transistor in a 4-pin, dual-emitter
SOT143B plastic package.
PINNING
PIN
DESCRIPTION
BFG93A
1 collector
2 base
3 emitter
4 emitter
BFG93A/X
1 collector
2 emitter
3 base
4 emitter
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 SOT143B.
MARKING
TYPE NUMBER
BFG93A
BFG93A/X
CODE
R8%
%MX
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
C_re
f_T
G_UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral
power gain
F
noise figure
CONDITIONS
open emitter
open base
T_s ≤ 85 °C
I_C = i_c = 0; V_CB = 5 V; f = 1 MHz
I_C = 30 mA; V_CE = 5 V; f = 500 MHz
I_C = 30 mA; V_CE = 8 V; T_amb = 25 °C;
f = 1 GHz
I_C = 30 mA; V_CE = 8 V; T_amb = 25 °C;
f = 2 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
MIN.
−
−
−
−
−
4.5
−
TYP.
−
−
−
−
0.6
6
16
MAX. UNIT
15
V
12
V
35
mA
300 mW
−
pF
−
GHz
−
dB
−
10
−
dB
−
1.7
−
dB
Rev. 05 - 26 November 2007
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