BCV26 Datasheet, PDF (3/7 Pages) NXP Semiconductors – PNP Darlington transistors

NXP Semiconductors
PNP Darlington transistors
Product data sheet
BCV26; BCV46
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
BCV26
BCV46
collector-emitter voltage
BCV26
BCV46
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
V_BE = 0
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_th(j-a)
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
−40
V
−
−80
V
−
−30
V
−
−60
V
−
−10
V
−
−500
mA
−
−800
mA
−
−100
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
VALUE
500
UNIT
K/W
2004 Jan 13
3