BCV26 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PNP Darlington transistors

NXP Semiconductors
PNP Darlington transistors
Product data sheet
BCV26; BCV46
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 60 V)
• Very high DC current gain (min. 10000).
APPLICATIONS
• Where very high amplification is required.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
MARKING
TYPE NUMBER
BCV26
BCV46
MARKING CODE⁽¹⁾
FD*
FE*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
handbook, halfpage
3
1
2
Top view
1
3
TR1
TR2
2
MAM299
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
BCV26
BCV46
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 13
2