BC847QAPN Datasheet, PDF (3/14 Pages) NXP Semiconductors – 45 V, 100 mA NPN/PNP general-purpose transistor

NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
V_CBO
collector-base voltage
open emitter
V_CEO
collector-emitter voltage
open base
V_EBO
emitter-base voltage
open collector
I_C
collector current
I_CM
peak collector current
single pulse; t_p ≤ 1 ms
I_BM
peak base current
P_tot
total power dissipation
T_amb ≤ 25 °C
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Min Max Unit
-
-
-
-
-
-
[1]
-
50
V
45
V
6
V
100 mA
200 mA
100 mA
230 mW
[1]
-
350 mW
-
150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
P_tot
(mW)
300
aaa-007377
200
100
0
-75
-25
25
75
125
175
T_amb (°C)
FR4 PCB, standard footprint
Fig. 2. Per device: Power derating curve
BC847QAPN
Product data sheet
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19 July 2013
© NXP N.V. 2013. All rights reserved
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