BC847QAPN Datasheet, PDF (1/14 Pages) NXP Semiconductors – 45 V, 100 mA NPN/PNP general-purpose transistor

BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
19 July 2013
Product data sheet
1. General description
NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Reduces component count
• Reduces pick and place costs
• AEC-Q101 qualified
• Low package height of 0.37 mm
3. Applications
• General-purpose switching and amplification
• Mobile applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
V_CEO
collector-emitter
voltage
open base
I_C
collector current
Per transistor; for the PNP transistor with negative polarity
h_FE
DC current gain
V_CE = 5 V; I_C = 2 mA; T_amb = 25 °C
Min Typ Max Unit
-
-
45
V
-
-
100 mA
200 -
450
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