BAT18 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Band-switching diode

Philips Semiconductors
BAT18
Silicon planar diode
100
I_F
(mA)
80
(1) (2)
001aab165
(3)
60
40
20
0
0.3
0.7
1.1
1.5
V_F (V)
(1) T_j = 60 °C; typical values.
(2) T_j = 25 °C; typical values.
(3) T_j = 25 °C; maximum values.
Fig 1. Forward current as a function of forward
voltage.
1.5
Cd
(pF)
1.3
001aab167
1.1
0.9
0.7
0.5
10^-1
1
10
10²
V_R (V)
f = 1 MHz; T_j = 25 °C.
Fig 3. Diode capacitance as a function of reverse
voltage; typical values.
10⁵
I_R
(nA)
10⁴
001aab166
(1)
10³
10²
(2)
10
1
10^−1
0
40
80
120
160
Tj (°C)
V_R = 20 V.
(1) maximum values.
(2) typical values.
Fig 2. Reverse current as a function of junction
temperature.
001aab168
2
r_D
(Ω)
1
0
1
10
10²
I_F (mA)
f = 200 MHz; T_j = 25 °C.
Fig 4. Diode forward resistance as a function of
forward current; typical values.
9397 750 13385
Product data sheet
Rev. 02 — 31 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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