BAT18 Datasheet, PDF (2/7 Pages) NXP Semiconductors – Band-switching diode

Philips Semiconductors
BAT18
Silicon planar diode
4. Marking
Table 3: Marking
Type number
BAT18
[1] * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
5. Limiting values
Marking code ^[1]
10*
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_R
continuous reverse voltage
-
I_F
continuous forward current
-
T_stg
storage temperature
−55
T_j
junction temperature
-
Max Unit
35
V
100
mA
+125 °C
125
°C
6. Thermal characteristics
Table 5: Thermal characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
R_th(j-tp)
R_th(j-a)
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
[1] Device mounted on a FR4 printed-circuit board.
7. Characteristics
Typ
330
[1] ₅₀₀
Unit
K/W
K/W
Table 6: Electrical characteristics
Symbol Parameter
Conditions
V_F
forward voltage I_F = 100 mA; see Figure 1
I_R
reverse current see Figure 2
V_R = 20 V
V_R = 20 V; T_j = 60 °C
C_d
diode capacitance V_R = 20 V; f = 1 MHz; see Figure 3
r_D
diode forward
I_F = 5 mA; f = 200 MHz; see Figure 4
resistance
Min Typ Max Unit
- - 1.2 V
- - 100 nA
- - 1 µA
- 0.8 1.0 pF
- 0.5 0.7 Ω
9397 750 13385
Product data sheet
Rev. 02 — 31 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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