PMEG6010ETR Datasheet, PDF (2/13 Pages) NXP Semiconductors – High-temperature 60 V, 1 A Schottky barrier rectifier

NXP Semiconductors
PMEG6010ETR
High-temperature 60 V, 1 A Schottky barrier rectifier
Symbol
t_rr
Parameter
Conditions
reverse recovery time I_R = 0.5 A; I_F = 0.5 A; I_R(meas) = 0.1 A;
T_j = 25 °C
Min Typ Max Unit
-
4.4 -
ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
Simplified outline
1
2
SOD123W
[1] The marking bar indicates the cathode.
Graphic symbol
1
2
sym001
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMEG6010ETR
SOD123W
Description
plastic surface mounted package; 2 leads
Version
SOD123W
4. Marking
Table 4. Marking codes
Type number
PMEG6010ETR
Marking code
EK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_R
reverse voltage
T_j = 25 °C
I_F
forward current
T_sp = 165 °C
I_F(AV)
average forward current
δ = 0.5 ; f = 20 kHz; T_amb ≤ 140 °C;
[1]
square wave
δ = 0.5 ; f = 20 kHz; T_sp ≤ 170 °C;
square wave
I_FSM
non-repetitive peak forward
t_p = 8 ms; T_j(init) = 25 °C; square wave
current
PMEG6010ETR
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 October 2012
Min Max Unit
-
60
V
-
1.4 A
-
1
A
-
1
A
-
50
A
© NXP B.V. 2012. All rights reserved
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