PMEG6010ETR Datasheet, PDF (1/13 Pages) NXP Semiconductors – High-temperature 60 V, 1 A Schottky barrier rectifier

PMEG6010ETR
High-temperature 60 V, 1 A Schottky barrier rectifier
10 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
• Average forward current: I_F(AV) ≤ 1 A
• Reverse voltage: V_R ≤ 60 V
• Low forward voltage
• High power capability due to clip-bonding technology
• Small and flat lead SMD plastic package
• AEC-Q101 qualified
• High temperature T_j ≤ 175 °C
1.3 Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I_F
I_F(AV)
Quick reference data
Parameter
forward current
average forward
current
V_R
reverse voltage
V_F
forward voltage
I_R
reverse current
Conditions
T_sp = 165 °C
δ = 0.5 ; f = 20 kHz; T_amb ≤ 140 °C;
square wave
δ = 0.5 ; f = 20 kHz; T_sp ≤ 170 °C;
square wave
T_j = 25 °C
I_F = 1 A; T_j = 25 °C
T_j = 25 °C; V_R = 60 V; t_p ≤ 300 µs;
δ ≤ 0.02 ; pulsed
Min Typ Max Unit
-
-
1.4 A
[1]
-
-
1
A
-
-
1
A
-
-
60
V
-
460 530 mV
-
30
60
µA
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