BUK7505-30A Datasheet, PDF (2/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7505-30A
STATIC CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
I_DSS
I_GSS
R_DS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
V_GS = 0 V; I_D = 0.25 mA;
T_j = -55˚C
V_DS = V_GS; I_D = 1 mA
T_j = 175˚C
T_j = -55˚C
V_DS = 30 V; V_GS = 0 V;
T_j = 175˚C
V_GS = ±20 V; V_DS = 0 V
V_GS = 10 V; I_D = 25 A
T_j = 175˚C
MIN.
30
27
2
1
-
-
-
-
-
-
TYP.
-
-
3.0
-
-
0.05
-
2
4.3
-
MAX.
-
-
4.0
-
4.4
10
500
100
5
9.3
UNIT
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T_mb = 25˚C unless otherwise specified
SYMBOL PARAMETER
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
t_{d on}
Turn-on delay time
t_r
Turn-on rise time
t_{d off}
Turn-off delay time
t_f
Turn-off fall time
L_d
Internal drain inductance
L_d
Internal drain inductance
L_s
Internal source inductance
CONDITIONS
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_DD = 30 V; R_load =1.2Ω;
V_GS = 10 V; R_G = 10 Ω
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
-
-
-
-
-
-
-
-
TYP.
4500
1500
960
35
130
155
150
3.5
MAX.
6000
1800
1300
55
200
230
220
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_DR
Continuous reverse drain
current
I_DRM
Pulsed reverse drain current
V_SD
Diode forward voltage
I_F = 25 A; V_GS = 0 V
I_F = 75 A; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 75 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge
V_GS = -10 V; V_R = 30 V
MIN. TYP. MAX. UNIT
-
-
75
A
-
- 240 A
- 0.85 1.2 V
-
1.1
-
V
- 400 -
ns
-
1.0
-
µC
September 1999
2
Rev 1.100