BLF6G22LS-100 Datasheet, PDF (2/12 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
1.3 Applications
„ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
3
[1]
2
1
2
3
sym112
Table 3. Ordering information
Type number Package
Name Description
BLF6G22LS-100 -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
T_stg
storage temperature
T_j
junction temperature
Min Max Unit
-
65 V
−0.5 +13 V
-
29
A
−65 +150 °C
-
225 °C
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
R_th(j-case) thermal resistance from junction to case
Conditions
T_case = 80 °C; P_L = 25 W
Typ Unit
0.43 K/W
BLF6G22LS-100_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 31 March 2010
© NXP B.V. 2010. All rights reserved.
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