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BLF6G22LS-100 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor | |||
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BLF6G22LS-100
Power LDMOS transistor
Rev. 02 â 31 March 2010
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f
VDS PL(AV)
Gp
ηD IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 28 25
18.2 29 â37[1]
ACPR
(dBc)
â41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 950 mA:
 Average output power = 25 W
 Gain = 18.2 dB
 Efficiency = 29 %
 IMD3 = â37 dBc
 ACPR = â41 dBc
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (2000 MHz to 2200 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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