BLF6G21-10G Datasheet, PDF (2/11 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF6G21-10G
Power LDMOS transistor
I Excellent thermal stability
I No internal matching for broadband operation
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
multi carrier applications in the HF to 2200 MHz frequency range
I Broadcast drivers
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
1
[1]
3
2
3
sym112
2
Table 3. Ordering information
Type number Package
Name Description
BLF6G21-10G -
ceramic surface-mounted package; 2 leads
Version
SOT538A
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
V_DS
drain-source voltage
V_GS
gate-source voltage
T_stg
storage temperature
T_j
junction temperature
-
65
V
−0.5 +13
V
−65 +150 °C
-
225
°C
BLF6G21-10G_2
Product data sheet
Rev. 02 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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