BLF6G21-10G Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G21-10G
Power LDMOS transistor
Rev. 02 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
Table 1. Typical performance
I_Dq = 100 mA; T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation f
V_DS
P_L(AV)
G_p
η_D
(MHz)
(V)
(W)
(dB)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.7
18.5
15
1-carrier W-CDMA 2110 to 2170 28
2
19.3
31
ACPR
(dBc)
−50^[1]
−39^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an I_Dq of 100 mA:
N Average output power = 0.7 W
N Gain = 18.5 dB
N Efficiency = 15 %
N ACPR = −50 dBc
I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an I_Dq of 100 mA:
N Average output power = 2 W
N Gain = 19.3 dB
N Efficiency = 31 %
N ACPR = −39 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency