BGU7003 Datasheet, PDF (2/17 Pages) NXP Semiconductors – Wideband silicon germanium low-noise amplifier MMIC

NXP Semiconductors
BGU7003
Wideband silicon germanium low-noise amplifier MMIC
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 °C; V_CC = 2.5 V; I_CC(tot) = 5.0 mA; V_ENABLE ≥ 0.7 V; f = 1575 MHz; Z_S = Z_L = 50 Ω (input and output matched to
50 Ω) unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V_CC
I_CC(tot)
T_amb
P_tot
|s₂₁|²
NF
supply voltage
total supply current
ambient temperature
total power dissipation
Insertion power gain
noise figure
RF input AC coupled
configurable with external resistor
T_sp ≤ 103 °C
2.2 -
[1] ₃
-
−40 +25
[2] _-
-
- 18.3
- 0.80
2.85 V
15 mA
+85 °C
70 mW
-
dB
-
dB
P_i(1dB)
IP3_I
input power at 1 dB gain compression
input third-order intercept point
jammers at f₁ = f + 138 MHz and
f₂ = f + 276 MHz
-
−20.1 -
dBm
-
−0.2 -
dBm
[1] I_CC(tot) = I_CC + I_{RF_OUT} + I_{R_BIAS}.
[2] T_sp is the temperature at the solder point of the ground lead.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
R_BIAS
RF_IN
GND
RF_OUT
ENABLE
V_CC
Simplified outline Graphic symbol
123
56
2
4
654
bottom view
13
sym128
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
Version
BGU7003
XSON6
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1 × 1 × 0.5 mm
4. Marking
Table 4. Marking codes
Type number
BGU7003
Marking code
B3
BGU7003_1
Product data sheet
Rev. 01 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
2 of 17