BGU7003 Datasheet, PDF(1/17 Page) NXP Semiconductors – Wideband silicon germanium low-noise amplifier MMIC

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BGU7003 Datasheet, PDF (1/17 Pages) NXP Semiconductors – Wideband silicon germanium low-noise amplifier MMIC

BGU7003

Wideband silicon germanium low-noise ampliï¬er MMIC

Rev. 01 â 2 March 2009

Product data sheet

1. Product proï¬le

CAUTION

1.1 General description

The BGU7003 MMIC is a wideband ampliï¬er in SiGe:C technology for high speed,

low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

package.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Low noise high gain microwave MMIC

I Applicable between 40 MHz and 6 GHz

I Integrated temperature stabilized bias for easy design

I Bias current conï¬gurable with external resistor

I Noise ï¬gure NF = 0.80 dB at 1.575 GHz

I Insertion power gain = 18.3 dB at 1.575 GHz

I 110 GHz transit frequency - SiGe:C technology

I Power-down mode current consumption < 1 ÂµA

I Optimized performance at low 5 mA supply current

I ESD protection > 1 kV Human Body Model (HBM) on all pins

1.3 Applications

I GPS

I Satellite radio

I Low-noise ampliï¬ers for microwave communications systems

I WLAN and CDMA applications

I Analog / digital cordless applications

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