PBSS5230PAP Datasheet, PDF (11/17 Pages) NXP Semiconductors – 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS5230PAP
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
600
h_FE
(1)
400
(2)
200
(3)
006aad196
-3 _{IB = -30 mA -27 -24 -21}
I_C
(A)
-2
-1
006aad197
-18
-15
-12
-9
-6
-3
0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 10. DC current gain as a function of collector
current; typical values
-1.2
006aad198
V_BE
(V)
-0.8
(1)
(2)
(3)
-0.4
0
0
-1
-2
-3
-4
-5
V_CE (V)
T_amb = 25 °C
Fig. 11. Collector current as a function of collector-
emitter voltage; typical values
-1.2
V_BEsat
(V)
-1.0
-0.8
-0.6
-0.4
006aad199
(1)
(2)
(3)
0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 12. Base-emitter voltage as a function of collector
current; typical values
-0.2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 13. Base-emitter saturation voltage as a function of
collector current; typical values
PBSS5230PAP
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 January 2013
© NXP B.V. 2013. All rights reserved
11 / 17