 English |
|
|
|
|
|
|
|
| PBSS5230PAP Datasheet, PDF (1/17 Pages) NXP Semiconductors – 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor | |||
| |||
|
PBSS5230PAP
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
11 January 2013
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN.
2. Features and benefits
⢠Very low collector-emitter saturation voltage VCEsat
⢠High collector current capability IC and ICM
⢠High collector current gain hFE at high IC
⢠Reduced Printed-Circuit Board (PCB) requirements
⢠High energy efficiency due to less heat generation
⢠AEC-Q101 qualified
3. Applications
⢠Load switch
⢠Battery-driven devices
⢠Power management
⢠Charging circuits
⢠Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC
collector current
ICM
peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ⤠1 ms
IC = -1 A; IB = -0.1 A; pulsed;
tp ⤠300 µs; δ ⤠0.02 ; Tamb = 25 °C
Min Typ Max Unit
-
-
-30 V
-
-
-2
A
-
-
-3
A
-
-
195 mΩ
Scan or click this QR code to view the latest information for this product
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese